USE OF COMPUTER TOMOGRAPHY IN DENTISTRY. DENTO PROPRIETAS X-RAY

S.A. Abdurakhmonov; D.G' Anvarova

Авторы

S.A. Abdurakhmonov Tashkent Medical Academy
D.G' Anvarova Tashkent Medical Academy

Kalit so'zlar:

Multispiral computed tomography, Dento Proprietas X-ray, stationary detectors, X-ray tube, diagnostics, scanning, hard and soft tissues

Annotatsiya

Multispiral computed tomography, a modern medical technique, is highly effective in diagnosing diseases such as cancer, cardiovascular diseases, infectious diseases, injuries of the musculoskeletal system, and diseases of the musculoskeletal system. However, his diagnosis in the face-jaw area leads to the appearance of tumor diseases in patients. For this reason, we consider the Dento Proprietas X-ray setup based on the MSKT setup, the principle of operation of which is used to diagnose the maxillofacial area in dentistry. The lack of requirements for patients in the diagnostic process makes up for the shortcomings of previous diagnostic structures

Библиографические ссылки

M. K. Bakhadirkhanov, N. F. Zikrillaev, K. S. Ayupov, D. T. Bobonov, F. A. Kadirova, and N. Il’khomzhonov Spectral Range of Current Self-Oscillation in Manganese-Doped Silicon Technical Physics, 2006, Vol. 51, No. 9, pp. 1235–1236

N.F. Zikrillaev, G.A. Kushiev, S.B. Isamov, B.A Abdurakhmanov, O.B. Tursunov. Photovoltaic Properties of Silicon Doped with Manganese and Germanium. J. Nano- electron. Phys. 15 №1, 01021 2023. N.F.Zikrillaev, G.A.Kushiev, Sh.I.Hamrokulov, Y.A.Abduganiev “Optical Properties of GexSi1-x binary compounds in silicon” Journal of nano- and electronic physics, Vol. 15, No. 3, pp. 03024-1 - 03024-4, 2023.

X.M. Iliyev, S.B. Isamov, B.O. Isakov, U.X. Qurbonova, and S.A. Abduraxmonov, “A surface study of Si doped simultaneously with Ga and Sb,” East Eur. J. Phys. 3, 303, 2023.

Iliyev, V.B. Odzhaev, S.B. Isamov, B.O. Isakov, B.K. Ismaylov, K.S. Ayupov, S.I. Hamrokulov, and S.O. Khasanbaeva, “X-ray diffraction and raman spectroscopy analyses of GaSb-enriched Si surface formed by applying diffusion doping technique,” East Eur. J. Phys. 3, 363 (2023).

Iliyev, X., Xudoynazarov, Z., Isakov, B., Uralbayev, X. and Kushiev, G., 2023. Impurity of atoms of manganese diffusion by outside electric field into silicon. Science and innovation, 2(A8), pp.107-111 B Isakov, Z Xudoynazarov, G Kushiev, A Sattorov, F Abduqahhorov, 2023. Thermodynamic conditions for the formation of gasb binary compound in Si sample. Science and innovation, 2(A10), pp.29-34.

N.F. Zikrillaev, G.A.Kushiev, S.V.Koveshnikov, B.A. Abdurakhmanov, U.Kh.Kurbanova, and A.A.Sattorov, “Current status of silicon studies with GexSi1-x binary compounds and possibilities of their applications in electronics” East European journal of physics, No. 3, pp. 334-339, 2023.

S Hamrokulov, G Kushiev, B Isakov, Z Umarkhodjaeva Digital microscope Analysis of chemically cleaned silicon surface Science and innovation, 2023. Т.2 №5 Pp.138-142 11. Абдурахманов Б.А., Исамов С.Б., Кушиев Г.А. Автоматизированная установка определения параметров полупроводников методом Ван Дер Пау. Приборы, 2022 №2. С.14-18.

N. F. Zikrillaev, O. B. Tursunov, G. A. Kushiev. “Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms”. ISSN 1068-3755, Surface Engineering and Applied Electrochemistry, Vol. 59, No. 5, pp. 670–673. © Allerton Press, Inc., 2023